vishay siliconix SI6544BDQ document number: 72244 s-81056-rev. b, 12-may-08 www.vishay.com 1 n- and p-channel 30-v (d-s) mosfet features ? halogen-free ? trenchfet ? power mosfets product summary v ds (v) r ds(on) ( )i d (a) n-channel 30 0.032 at v gs = 10 v 4.3 0.046 at v gs = 4.5 v 3.7 p-channel - 30 0.043 at v gs = - 10 v - 3.8 0.073 at v gs = - 4.5 v - 2.8 ordering information: SI6544BDQ-t1-ge3 (lead (pb)-free and halogen-free) d 1 s 1 s 1 g 1 1 2 3 4 8 7 6 5 d 2 s 2 s 2 g 2 tssop-8 top view d 1 g 1 s 1 n-channel mosfet s 2 g 2 d 2 p-channel mosfet notes: a. surface mounted on fr4 board, t 10 s. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol n-channel p-channel unit 10 s steady state 10 s steady state drain-source voltage v ds 30 - 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) a t a = 25 c i d 4.3 3.7 - 3.8 - 3.8 a t a = 70 c 3.5 3.0 - 3.0 - 2.6 pulsed drain current i dm 20 - 20 continuous source current (diode conduction) a i s 1.0 0.7 - 1.0 - 0.7 maximum power dissipation a t a = 25 c p d 1.14 0.83 1.14 0.83 w t a = 70 c 0.73 0.53 0.73 0.53 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 10 s r thja 88 110 c/w steady state 120 150 maximum junction-to-foot (drain) r thjf 65 80 rohs compliant
www.vishay.com 2 document number: 72244 s-81056-rev. b, 12-may-08 vishay siliconix SI6544BDQ notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 1.0 3.0 v v ds = v gs , i d = - 250 a p-ch - 1.0 - 3.0 gate-body leakage i gss v ds = 0 v, v gs = 20 v n-ch 100 na n-ch 100 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v p-ch 1 a v ds = - 30 v, v gs = 0 v n-ch - 1 v ds = 30 v, v gs = 0 v, t j = 55 c p-ch 5 v ds = - 30 v, v gs = 0 v, t j = 55 c n-ch - 5 on-state drain current a i d(on) v ds 5 v, v gs = 10 v p-ch 20 a v ds - 5 v, v gs = - 10 v n-ch - 20 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 4.3 a p-ch 0.025 0.032 v gs = - 10 v, i d = - 3.8 a n-ch 0.034 0.043 v gs = 4.5 v, i d = 3.7 a p-ch 0.037 0.046 v gs = - 4.5 v, i d = - 2.8 a n-ch 0.058 0.073 forward transconductance a g fs v ds = 15 v, i d = 4.3 a p-ch 11 s v ds = - 15 v, i d = - 3.8 a n-ch 11 diode forward voltage a v sd i s = 1.25 a, v gs = 0 v p-ch 0.77 1.1 v i s = - 1.25 a, v gs = 0 v n-ch - 0.77 - 1.1 dynamic b total gate charge q g n-channel v ds = 15 v, v gs = 10 v, i d = 4.3 a p-channel v ds = - 15 v, v gs = - 10 v, i d = - 3.8 a n-ch 9.5 15 nc p-ch 16 25 gate-source charge q gs n-ch 1.8 p-ch 2.3 gate-drain charge q gd n-ch 1.55 p-ch 4.5 gate resistance r g n-ch 0.45 p-ch 8.8 tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 15 v, r l = 15 i d ? 1 a, v gen = 10 v, r g = 6 p-channel v dd = - 15 v, r l = 15 i d ? - 1 a, v gen = - 10 v, r g = 6 n-ch 13 25 ns p-ch 14 25 rise time t r n-ch 14 25 p-ch 14 25 turn-off delay time t d(off) n-ch 30 50 p-ch 40 65 fall time t f n-ch 10 20 p-ch 30 50 source-drain reverse recovery time t rr i f = 1.25 a, di/dt = 100 a/s n-ch 30 60 i f = - 1.25 a, di/dt = 100 a/s p-ch 30
document number: 72244 s-81056-rev. b, 12-may-08 www.vishay.com 3 vishay siliconix SI6544BDQ n-channel typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 4 8 12 16 20 012345 v gs = 10 thru 5 v v ds - drain-to-source voltage (v) - drain current (a) i d 3 v 4 v - r ds(on) 0.000 0.016 0.032 0.048 0.064 0.080 048121620 i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0246810 v ds = 15 v i d = 4.3 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 t c = 125 c - 55 c 25 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 220 440 660 880 1100 0 6 12 18 24 30 v ds - drain-to-source voltage (v) c rss c - capacitance (pf) c oss c iss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 4.3 a t j - junction temperature (c) (normalized) - on-resistance r ds(on)
www.vishay.com 4 document number: 72244 s-81056-rev. b, 12-may-08 vishay siliconix SI6544BDQ n-channel typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.3 0.6 0.9 1.2 1.5 t j = 25 c 20 10 0.1 v sd - source-to-drain voltage (v) - source current (a) i s t j = 150 c 1 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - temperature (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.03 0.06 0.09 0.12 0.15 0246810 i d = 4.3 a - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0 120 200 40 80 power (w) t ime (s) 160 110 10 -1 10 -3 10 -2 safe operating area, junction-to-case 100 1 0.1 1 10 100 0.01 10 100 ms - drain current (a) i d 0.1 limited by r * ds(on) t c = 25 c single pulse 1 s 10 s dc 10 ms 1 ms v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified
document number: 72244 s-81056-rev. b, 12-may-08 www.vishay.com 5 vishay siliconix SI6544BDQ n-channel typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 120 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square w ave pulse duration (s) normalized effective transient thermal impedance
www.vishay.com 6 document number: 72244 s-81056-rev. b, 12-may-08 vishay siliconix SI6544BDQ p-channel typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 4 8 12 16 20 012345 v gs = 10 thru 5 v v ds - drain-to-source voltage (v) - drain current (a) i d 3 v 4 v - on-resistance ( ) r ds(on) 0.00 0.03 0.06 0.09 0.12 0.15 048121620 i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0.0 3.2 6.4 9.6 12.8 16.0 v ds = 15 v i d = 3.8 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 t c = 125 c - 55 c 25 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 220 440 660 880 1100 0 6 12 18 24 30 v ds - drain-to-source voltage (v) c rss c - capacitance (pf) c oss c iss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 3.8 a t j - junction temperature (c) (normalized) - on-resistance r ds(on)
document number: 72244 s-81056-rev. b, 12-may-08 www.vishay.com 7 vishay siliconix SI6544BDQ p-channel typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.3 0.6 0.9 1.2 1.5 t j = 25 c 20 10 0.1 v sd - source-to-drain voltage (v) - source current (a) i s t j = 150 c 1 - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - temperature (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.04 0.08 0.12 0.16 0.20 0246810 i d = 3.8 a - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0 120 200 40 80 power (w) t ime (s) 160 110 10 -1 10 -3 10 -2 safe operating area, junction-to-case 100 1 0.1 1 10 100 0.01 10 100 ms - drain current (a) i d 0.1 limited by r * ds(on) t c = 25 c single pulse 1 s 10 s dc 10 ms 1 ms v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified
www.vishay.com 8 document number: 72244 s-81056-rev. b, 12-may-08 vishay siliconix SI6544BDQ p-channel typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72244 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 120 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square w ave pulse duration (s) normalized effective transient thermal impedance
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